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| 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A (Z) Rev. 1 Sep. 1995 Features * Very low reverse current. * Detection efficiency is very good. * Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS286 Cathode band Green Mark 7 Package Code MHD Outline 7 1 Cathode band 2 1. Cathode 2. Anode 1SS286 Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 25 35 150 100 -55 to +100 Unit V mA mW C C Electrical Characteristics (Ta = 25C) Item Forward voltage Reverse voltage Reverse current Capacitance Capacitance deviation Forward voltage deviation ESD-Capability Symbol VF VR IR C C VF -- Min -- 25 -- -- -- -- 10 Typ -- -- -- -- -- -- -- Max 0.6 -- 10 1.2 0.1 10 -- Unit V V nA pF pF mV V Test Condition IF = 10mA IR = 10A VR= 10V VR = 0V, f = 1MHz VR = 0V, f = 1MHz IF = 10mA * C = 200pF, Both forward and reverse direction 1 pulse. 1 Notes: 1. Failure criterion; IR 20A 2. Each group shall unify a multiple of 4 diodes Rev.1, Sep. 1995, page 2 of 6 1SS286 10 -1 10-2 10 -3 Forward current I F (A) 10 -4 10 10 -5 -6 10 10 -7 -8 -9 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage -6 10 Reverse current I R (A) 10 -7 10 -8 10 -9 10 -10 0 5 10 20 15 Reverse voltage VR (V) 25 Fig.2 Reverse current Vs. Reverse voltage Rev.1, Sep. 1995, page 3 of 6 1SS286 1.0 f = 1MHz Capacitance C (pF) 10 -1 10 -2 1.0 10 Reverse voltage VR (V) 40 Fig.3 Capacitance Vs. Reverse voltage Rev.1, Sep. 1995, page 4 of 6 1SS286 Package Dimensions Unit: mm 26.0 Min 2.4 Max 26.0 Min 7 2.0 Max 0.4 1 2 Cathode band (Green) 1 Cathode 2 Anode HITACHI Code JEDEC Code EIAJ Code Weight (g) MHD DO-34 -- 0.084 Rev.1, Sep. 1995, page 5 of 6 1SS286 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.1, Sep. 1995, page 6 of 6 |
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